| PART |
Description |
Maker |
| MTB4N80E1_D ON2427 MTB4N80E1 MTB4N80E1-D |
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 4.0 AMPERES 800 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTB3N120E_D ON2421 MTB3N120E MTB3N120E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 1200 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTD2N40E MTD2N40E_D ON2495 |
From old datasheet system
TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS(on) = 3.5 OHM
|
Motorola, Inc
ON Semi
|
| MTP2N40E_D ON2578 MTP2N40E |
TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS(on) = 3.5 OHM
From old datasheet system
|
Motorola, Inc
ON Semi
|
| MTP5N40E ON2629 |
From old datasheet system
TMOS POWER FET 5.0 AMPERES 400 VOLTS RDS(on) = 1.0 OHM
|
Fairchild Semiconductor
Motorola, Inc
|
| MTP12P10 MTP12P10_D ON2547 |
From old datasheet system
TMOS POWER FET 12 AMPERES 60 VOLTS
TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.3 OHM
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| MTP4N80E_D ON2614 ON2613 MTP4N80 MTP4N80E MTP4N80E |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM TMOS是功率场效应晶体.0安培800伏特的RDSon）\u003d 3.0欧姆
|
ON Semiconductor
Motorola, Inc
Motorola Mobility Holdings, Inc.
|
| MTP3N100E MTP3N100E_D ON2598 3N100E MTP3N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM
3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
MOTOROLA[Motorola, Inc]
Motorola, Inc.
ON SEMICONDUCTOR
|
| MTV16N50E MTV16N50E_D ON2670 MTV16N50E-D TV16N50E |
16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
|
ETC
Motorola, Inc
ON Semiconductor
|
| MMDF2C03HD ON2158 MMDF2C03HD-D |
Complementary TMOS Field Effect Transistors
COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| IRF540_D ON0285 IRF540/D IRF540-D IRF540 |
27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100V7A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管（N沟道增强型硅门）)
From old datasheet system
TMOS POWER FET 27 AMPERES
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
ON Semiconductor
|
